STMICROECTRONICS STD18N55M overview
STMicroelectronics STD18N55M Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number...
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Product groupModules
DescriptionSTMicroelectronics STD18N55M Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:550 V, Number of Elements:1, Drain Current-Max (Abs) (ID):13 A, Drain Current-Max (ID):13 A, Drain-source On Resistance-Max:240 mΩ
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