STMICROECTRONICS STB185N55 overview
STMicroelectronics STB185N55 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number...
Product details
Manufactured bySTMICROECTRONICS
Product groupModules
DescriptionSTMicroelectronics STB185N55 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:55 V, Number of Elements:1, Drain Current-Max (Abs) (ID):120 A, Drain Current-Max (ID):120 A, Drain-source On Resistance-Max:3.5 mΩ
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
STMICROECTRONICS
View STMICROECTRONICS profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request