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ST2009DHI

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STMICROECTRONICS ST2009DHI

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STMicroelectronics ST2009DHI Power Bipolar Transistor, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):10 A, Polarity/Channel Type:NPN, Surface ...

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Part number or familyST2009DHI
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Manufactured bySTMICROECTRONICS
Product groupModules
DescriptionSTMicroelectronics ST2009DHI Power Bipolar Transistor, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):10 A, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):5

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