STMICROECTRONICS STP4NA80FI overview
STMicroelectronics STP4NA80FI Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number...
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DescriptionSTMicroelectronics STP4NA80FI Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:800 V, Number of Elements:1, Drain Current-Max (Abs) (ID):2.5 A, Drain Current-Max (ID):2.5 A, Drain-source On Resistance-Max:3 Ω
DescriptionTrans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) ISOWATT220
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