STMICROECTRONICS STD10NM65N overview
STMicroelectronics STD10NM65N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number o...
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DescriptionSTMicroelectronics STD10NM65N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:650 V,Number of Elements:1,Drain Current-Max (Abs) (ID):9 A,Drain Current-Max (ID):9 A,Drain-source On Resistance-Max:480 m?
DescriptionTrans MOSFET N-CH 650V 9A 3-Pin(2+Tab) DPAK T/R
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