STMICROECTRONICS IRF640FP overview
IRF640FP is an FET transistor made by STMICROECTRONICS. STMicroelectronics IRF640FP Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (Abs) (ID):18…
Product details
Manufactured bySTMICROECTRONICS
Product typeFET Transistor
DescriptionSTMicroelectronics IRF640FP Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (Abs) (ID):18 A, Drain Current-Max (ID):18 A, Drain-source On Resistance-Max:180 mΩ
DescriptionTrans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220FP Tube
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