STMICROECTRONICS STD11NM60N-1 overview
STMicroelectronics STD11NM60N-1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):10 A, Drain Current-Max (ID):10 A, Dra...
What is STMICROECTRONICS STD11NM60N-1?
STMicroelectronics STD11NM60N-1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):10 A, Drain Current-Max (ID):10 A, Dra...
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DescriptionSTMicroelectronics STD11NM60N-1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):10 A, Drain Current-Max (ID):10 A, Drain-source On Resistance-Max:450 mΩ
Description 1786358273Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) IPAK Tube
Description 1782736200STMICROELECTRONICS STD11NM60N-1 MOSFET, N I-PAK Transistor type:MDmesh Transistor polarity:N Voltage, Vds max:650V Case style:I-PAK Current, Id cont:10A Current, Idm pulse:40A Power, Pd:100W Resistance, Rds on:0.45R Capacitance, Ciss typ:850pF Current, RoHS Compliant: Yes
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