STMICROECTRONICS STB21NM50N overview
STMicroelectronics STB21NM50N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (Abs) (ID):18 A, Drain Current-Max (ID):18 A, Drai...
What is STMICROECTRONICS STB21NM50N?
STMicroelectronics STB21NM50N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (Abs) (ID):18 A, Drain Current-Max (ID):18 A, Drai...
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DescriptionSTMicroelectronics STB21NM50N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (Abs) (ID):18 A, Drain Current-Max (ID):18 A, Drain-source On Resistance-Max:190 mΩ
Description 1786358270Trans MOSFET N-CH 500V 18A 3-Pin(2+Tab) D2PAK T/R
Description 1782675431STMICROELECTRONICS STB21NM50N MOSFET, N D2-PAK Transistor type:MOSFET Transistor polarity:N Voltage, Vds max:550V Case style:D2-PAK Current, Id cont:18A Current, Idm pulse:72A Power, Pd:140W Resistance, Rds on:0.19R SMD:1 Capacitance, Ciss typ:1950pF RoHS Compliant: Yes
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