STMICROECTRONICS STB12NM50N overview
STMicroelectronics STB12NM50N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (Abs) (ID):11 A,Drain Current-Max (ID):11 A,Drain-source...
What is STMICROECTRONICS STB12NM50N?
STMicroelectronics STB12NM50N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (Abs) (ID):11 A,Drain Current-Max (ID):11 A,Drain-source...
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DescriptionSTMicroelectronics STB12NM50N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (Abs) (ID):11 A,Drain Current-Max (ID):11 A,Drain-source On Resistance-Max:380 m?
Description 1786358270Trans MOSFET N-CH 500V 11A 3-Pin(2+Tab) D2PAK T/R
Description 1782672659STMICROELECTRONICS STB12NM50N MOSFET, N D2-PAK Transistor type:MOSFET Transistor polarity:N Voltage, Vds max:550V Case style:D2-PAK Current, Id cont:11A Current, Idm pulse:44A Power, Pd:100W Resistance, Rds on:0.38R SMD:1 Capacitance, Ciss typ:880pF RoHS Compliant: Yes
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