STMICROECTRONICS PD57006-E overview
STMicroelectronics PD57006-E Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):1 A, Dra...
What is STMICROECTRONICS PD57006-E?
STMicroelectronics PD57006-E Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):1 A, Dra...
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DescriptionSTMicroelectronics PD57006-E Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):1 A, Drain Current-Max (ID):1 A
Description 1768426012STMICROELECTRONICS PD57006-E MOSFET, RF 6W 945MHZMOSFET, RF 6W 945MHZ Transistor type:MOSFET Transistor polarity:N Voltage, Vds max:65V Case style:PowerSO-10RF (formed lead) Current, Id cont:1A Power, Pd:20W SMD:1 Temperature, full power rating:70(degree RoHS Compliant: Yes
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