STMICROECTRONICS SD56120M overview
STMicroelectronics SD56120M Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2, Drain Current-Max (...
What is STMICROECTRONICS SD56120M?
STMicroelectronics SD56120M Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2, Drain Current-Max (...
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DescriptionSTMicroelectronics SD56120M Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2, Drain Current-Max (Abs) (ID):14 A, Drain Current-Max (ID):14 A
Description 1785181566Trans RF MOSFET N-CH 65V 14A 5-Pin Case M-252 Tube
Description 1782421972STMICROELECTRONICS SD56120M TRANSISTOR RF PWR LDMOST M252
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