STMICROECTRONICS SD56120 STMicroelectronics SD56120 Rf Power Field-effect Transistor

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STMicroelectronics SD56120 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2, Drain Current-Max (A...

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Manufactured bySTMICROECTRONICS

Product groupModules

DescriptionSTMicroelectronics SD56120 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2, Drain Current-Max (Abs) (ID):14 A, Drain Current-Max (ID):14 A

Description 1782421916STMICROELECTRONICS SD56120 TRANSISTOR RF PWR LDMOST M246

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