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LET9060C

STMICROELECTRONICS LET9060C Integrated Circuit, RF Power Transistors Ldmos Enha...

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STMICROELECTRONICS LET9060C Integrated Circuit, RF Power Transistors Ldmos Enha...

STMICROECTRONICS LET9060C overview

STMicroelectronics LET9060C Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:80 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):7 A, Drai...

Manufactured bySTMICROECTRONICS
Part number or familyLET9060C
Product groupModules

What is STMICROECTRONICS LET9060C?

STMICROELECTRONICS LET9060C Integrated Circuit, RF Power Transistors Ldmos Enha.... STMicroelectronics LET9060C Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:80 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):7 A, Drai...

Product details

Manufactured bySTMICROECTRONICS
Product groupModules
DescriptionSTMicroelectronics LET9060C Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:80 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):7 A, Drain Current-Max (ID):12 A
Description 1783022497STMICROELECTRONICS LET9060C Integrated Circuit, RF Power Transistors Ldmos Enhanced Technology

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Product group Modules Explore Modules Explore Integrated Circuit
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