STMICROECTRONICS LET9006 overview
STMicroelectronics LET9006 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:5, DS...
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DescriptionSTMicroelectronics LET9006 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:5, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):1 A, Drain Current-Max (ID):1 A
DescriptionSTMICROELECTRONICS LET9006 Integrated Circuit, RF Power Transistors Ldmos Enhanced Technology in Plastic Package
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