STMICROECTRONICS LET9002 overview
STMicroelectronics LET9002 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:5, DS...
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DescriptionSTMicroelectronics LET9002 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:5, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):250 mA, Drain Current-Max (ID):4 A
DescriptionSTMICROELECTRONICS LET9002 Integrated Circuit, Rf Power Transistors Ldmos Enhanced Technology In Plastic Package
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