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LET9002

STMICROELECTRONICS LET9002 Integrated Circuit, Rf Power Transistors Ldmos Enha...

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STMICROELECTRONICS LET9002 Integrated Circuit, Rf Power Transistors Ldmos Enha...

STMICROECTRONICS LET9002 overview

STMicroelectronics LET9002 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:5, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):250 mA, Dr...

Manufactured bySTMICROECTRONICS
Part number or familyLET9002
Product groupModules

What is STMICROECTRONICS LET9002?

STMICROELECTRONICS LET9002 Integrated Circuit, Rf Power Transistors Ldmos Enha.... STMicroelectronics LET9002 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:5, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):250 mA, Dr...

Product details

Manufactured bySTMICROECTRONICS
Product groupModules
DescriptionSTMicroelectronics LET9002 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:5, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):250 mA, Drain Current-Max (ID):4 A
Description 1783022086STMICROELECTRONICS LET9002 Integrated Circuit, Rf Power Transistors Ldmos Enhanced Technology In Plastic Package

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Manufactured by STMICROECTRONICS View STMICROECTRONICS profile
Product group Modules Explore Modules Explore Integrated Circuit
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