STMICROECTRONICS LET8180 overview
STMicroelectronics LET8180 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number...
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DescriptionSTMicroelectronics LET8180 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2, Drain Current-Max (Abs) (ID):18 A, Drain Current-Max (ID):18 A
DescriptionSTMICROELECTRONICS LET8180 Integrated Circuit, RF Power Transistors Ldmos Enhanced Technology
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