Name: STMICROELECTRONICS LET8180 Integrated Circuit, RF Power Transistors Ldmos Enha...
Brand: STMICROECTRONICS
SKU: LET8180

STMICROECTRONICS LET8180 overview

STMicroelectronics LET8180 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2, Drain Current-Max (A...

Manufactured bySTMICROECTRONICS

Part number or familyLET8180

Product groupModules

What is STMICROECTRONICS LET8180?

STMICROELECTRONICS LET8180 Integrated Circuit, RF Power Transistors Ldmos Enha.... STMicroelectronics LET8180 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2, Drain Current-Max (A...

Product details

Manufactured bySTMICROECTRONICS

Product groupModules

DescriptionSTMicroelectronics LET8180 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2, Drain Current-Max (Abs) (ID):18 A, Drain Current-Max (ID):18 A

Description 1783022001STMICROELECTRONICS LET8180 Integrated Circuit, RF Power Transistors Ldmos Enhanced Technology

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