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LET21030C

STMICROELECTRONICS LET21030C Integrated Circuit, Rf Power Transistors Ldmos Enha...

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STMICROELECTRONICS LET21030C Integrated Circuit, Rf Power Transistors Ldmos Enha...

STMICROECTRONICS LET21030C overview

STMicroelectronics LET21030C Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:S BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):4 A, Drain Current-Max (ID)...

Manufactured bySTMICROECTRONICS
Part number or familyLET21030C
Product groupModules

What is STMICROECTRONICS LET21030C?

STMICROELECTRONICS LET21030C Integrated Circuit, Rf Power Transistors Ldmos Enha.... STMicroelectronics LET21030C Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:S BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):4 A, Drain Current-Max (ID)...

Product details

Manufactured bySTMICROECTRONICS
Product groupModules
DescriptionSTMicroelectronics LET21030C Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:S BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):4 A, Drain Current-Max (ID):4 A
Description 1783021577STMICROELECTRONICS LET21030C Integrated Circuit, Rf Power Transistors Ldmos Enhanced Technology

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Manufactured by STMICROECTRONICS View STMICROECTRONICS profile
Product group Modules Explore Modules Explore Integrated Circuit
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