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LET21008

STMICROELECTRONICS LET21008 Integrated Circuit, RF Power Transistors Ldmos Enha...

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STMICROELECTRONICS LET21008 Integrated Circuit, RF Power Transistors Ldmos Enha...

STMICROECTRONICS LET21008 overview

STMicroelectronics LET21008 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:5, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:S BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):2 A, Drain Current-Max (ID):...

Manufactured bySTMICROECTRONICS
Part number or familyLET21008
Product groupModules

What is STMICROECTRONICS LET21008?

STMICROELECTRONICS LET21008 Integrated Circuit, RF Power Transistors Ldmos Enha.... STMicroelectronics LET21008 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:5, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:S BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):2 A, Drain Current-Max (ID):...

Product details

Manufactured bySTMICROECTRONICS
Product groupModules
DescriptionSTMicroelectronics LET21008 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:5, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:S BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):2 A, Drain Current-Max (ID):2 A
Description 1783021493STMICROELECTRONICS LET21008 Integrated Circuit, RF Power Transistors Ldmos Enhanced Technology in Plastic Package

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Manufactured by STMICROECTRONICS View STMICROECTRONICS profile
Product group Modules Explore Modules Explore Integrated Circuit
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