STMICROECTRONICS LET20030C overview
STMicroelectronics LET20030C Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, ...
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DescriptionSTMicroelectronics LET20030C Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:L BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):4 A, Drain Current-Max (ID):4 A
DescriptionSTMICROELECTRONICS LET20030C Integrated Circuit, RF Power Transistors Ldmos Enhanced Technology
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