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LET20030C

STMICROELECTRONICS LET20030C Integrated Circuit, RF Power Transistors Ldmos Enha...

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STMICROELECTRONICS LET20030C Integrated Circuit, RF Power Transistors Ldmos Enha...

STMICROECTRONICS LET20030C overview

STMicroelectronics LET20030C Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:L BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):4 A, Drain Current-Max (ID)...

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Part number or familyLET20030C
Product groupModules

What is STMICROECTRONICS LET20030C?

STMICROELECTRONICS LET20030C Integrated Circuit, RF Power Transistors Ldmos Enha.... STMicroelectronics LET20030C Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:L BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):4 A, Drain Current-Max (ID)...

Product details

Manufactured bySTMICROECTRONICS
Product groupModules
DescriptionSTMicroelectronics LET20030C Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:L BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):4 A, Drain Current-Max (ID):4 A
Description 1783021243STMICROELECTRONICS LET20030C Integrated Circuit, RF Power Transistors Ldmos Enhanced Technology

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Product group Modules Explore Modules Explore Integrated Circuit
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