Name: STMICROELECTRONICS LET19060C Integrated Circuit, RF Power Transistors Ldmos Enha...
Brand: STMICROECTRONICS
SKU: LET19060C

STMICROECTRONICS LET19060C overview

STMicroelectronics LET19060C Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:2, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2, Drain Current-Max ...

Manufactured bySTMICROECTRONICS

Part number or familyLET19060C

Product groupModules

What is STMICROECTRONICS LET19060C?

STMICROELECTRONICS LET19060C Integrated Circuit, RF Power Transistors Ldmos Enha.... STMicroelectronics LET19060C Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:2, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2, Drain Current-Max ...

Product details

Manufactured bySTMICROECTRONICS

Product groupModules

DescriptionSTMicroelectronics LET19060C Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:2, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2, Drain Current-Max (Abs) (ID):7 A, Drain Current-Max (ID):7 A

Description 1783021074STMICROELECTRONICS LET19060C Integrated Circuit, RF Power Transistors Ldmos Enhanced Technology

Manufacturer, product group, and supply

See who makes this product, where it belongs, and where available inventory may be listed.

Manufactured by STMICROECTRONICS View STMICROECTRONICS profile

Product group Modules Explore Modules Explore Integrated Circuit

Available from Sourcing support available Start a sourcing request