STMICROECTRONICS STW80NE06-10 overview
STMicroelectronics STW80NE06-10 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Numb...
Product details
Manufactured bySTMICROECTRONICS
Product groupModules
DescriptionSTMicroelectronics STW80NE06-10 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):80 A, Drain Current-Max (ID):80 A, Drain-source On Resistance-Max:10 mΩ
DescriptionMOSFET N-CH 60V 80A TO-247
DescriptionSTMicroelectronics STW80NE06-10 Discrete Semiconductor Products
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
STMICROECTRONICS
View STMICROECTRONICS profile
Available from
Sourcing support available
Start a sourcing request