STMICROECTRONICS STW30NM60D overview
STMicroelectronics STW30NM60D Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of...
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DescriptionSTMicroelectronics STW30NM60D Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (Abs) (ID):30 A,Drain Current-Max (ID):30 A,Drain-source On Resistance-Max:145 m?
DescriptionMOSFET N-CH 600V 30A TO-247
DescriptionSTMicroelectronics STW30NM60D Discrete Semiconductor Products
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