STMICROECTRONICS STP7NB60 overview
STMicroelectronics STP7NB60 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of T...
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DescriptionSTMicroelectronics STP7NB60 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (Abs) (ID):7.2 A,Drain Current-Max (ID):7.2 A,Drain-source On Resistance-Max:1.2 ?
DescriptionMOSFET N-CH 600V 7.2A TO-220
DescriptionSTMicroelectronics STP7NB60 Discrete Semiconductor Products
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