STMICROECTRONICS STP21NM60N overview
STMicroelectronics STP21NM60N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number...
Product details
Manufactured bySTMICROECTRONICS
Product groupModules
DescriptionSTMicroelectronics STP21NM60N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):17 A, Drain Current-Max (ID):17 A, Drain-source On Resistance-Max:220 mΩ
DescriptionTrans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220 Tube
DescriptionSTMicroelectronics STP21NM60N Discrete Semiconductor Products
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
STMICROECTRONICS
View STMICROECTRONICS profile
Product group
Modules
Explore Modules Explore Discrete Semiconductor Products Explore FET Transistors
Available from
Sourcing support available
Start a sourcing request