STMICROECTRONICS STP12NM50FD overview
STMicroelectronics STP12NM50FD Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number o...
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DescriptionSTMicroelectronics STP12NM50FD Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (Abs) (ID):12 A,Drain Current-Max (ID):12 A,Drain-source On Resistance-Max:400 m?
DescriptionMOSFET N-CH 500V 12A TO-220
DescriptionSTMicroelectronics STP12NM50FD Discrete Semiconductor Products
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