STMICROECTRONICS STN2NE10L overview
STMicroelectronics STN2NE10L Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number...
Product details
Manufactured bySTMICROECTRONICS
Product groupModules
DescriptionSTMicroelectronics STN2NE10L Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):2 A, Drain Current-Max (ID):1.8 A, Drain-source On Resistance-Max:450 mΩ
DescriptionTrans MOSFET N-CH 100V 1.8A 4-Pin(3+Tab) SOT-223 T/R
DescriptionSTMicroelectronics STN2NE10L Discrete Semiconductor Products
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
STMICROECTRONICS
View STMICROECTRONICS profile
Product group
Modules
Explore Modules Explore Discrete Semiconductor Products Explore FET Transistors
Available from
Sourcing support available
Start a sourcing request