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STN2NE10

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STMICROECTRONICS STN2NE10

STMICROECTRONICS STN2NE10 overview

STMicroelectronics STN2NE10 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of ...

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Manufactured bySTMICROECTRONICS
Product groupModules
DescriptionSTMicroelectronics STN2NE10 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):2 A,Drain Current-Max (ID):2 A,Drain-source On Resistance-Max:400 m?
DescriptionTrans MOSFET N-CH 100V 2A 4-Pin(3+Tab) SOT-223 T/R
DescriptionSTMicroelectronics STN2NE10 Discrete Semiconductor Products

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