STMICROECTRONICS STGB3NB60SDT4 overview
STMicroelectronics STGB3NB60SDT4 IGBT, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5 V, Collector Current-Max (IC):6 A, Polarity/Channel T...
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Product groupModules
DescriptionSTMicroelectronics STGB3NB60SDT4 IGBT, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5 V, Collector Current-Max (IC):6 A, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1
DescriptionTrans IGBT Chip N-CH 600V 6A 70000mW 3-Pin(2+Tab) D2PAK T/R
DescriptionSTMicroelectronics STGB3NB60SDT4 Discrete Semiconductor Products
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