STMICROECTRONICS STGB20NB32LZ overview
STMicroelectronics STGB20NB32LZ IGBT, Collector-Emitter Voltage-Max:325 V, Gate-Emitter Thr Voltage-Max:2 V, Collector Current-Max (IC):40 A, Polarity/Channel T...
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DescriptionSTMicroelectronics STGB20NB32LZ IGBT, Collector-Emitter Voltage-Max:325 V, Gate-Emitter Thr Voltage-Max:2 V, Collector Current-Max (IC):40 A, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:2, Number of Elements:1
DescriptionIGBT 375V 40A 150W I2PAK
DescriptionSTMicroelectronics STGB20NB32LZ Discrete Semiconductor Products
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