STMICROECTRONICS STGB12NB60KDT4 overview
STMicroelectronics STGB12NB60KDT4 IGBT, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:7 V, Collector Current-Max (IC):30 A, Polarity/Channel...
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DescriptionSTMicroelectronics STGB12NB60KDT4 IGBT, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:7 V, Collector Current-Max (IC):30 A, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1
DescriptionIGBT 600V 30A 125W D2PAK
DescriptionSTMicroelectronics STGB12NB60KDT4 Discrete Semiconductor Products
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