STMICROECTRONICS STG3P2M10N60B overview
STMicroelectronics STG3P2M10N60B IGBT, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):19 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, ...
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Product groupModules
DescriptionSTMicroelectronics STG3P2M10N60B IGBT, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):19 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:16, Number of Elements:6
DescriptionTrans IGBT Module N-CH 600V 19A 56000mW 8-Pin SEMITOP 2 Box
DescriptionSTMicroelectronics STG3P2M10N60B Discrete Semiconductor Products
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