STMICROECTRONICS STD2NM60T4 overview
STMicroelectronics STD2NM60T4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number o...
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DescriptionSTMicroelectronics STD2NM60T4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (Abs) (ID):2 A,Drain Current-Max (ID):2 A,Drain-source On Resistance-Max:3.2 ?
DescriptionMOSFET N-CH 600V 2A DPAK
DescriptionSTMicroelectronics STD2NM60T4 Discrete Semiconductor Products
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