STMICROECTRONICS STB80NE03L-06T4 overview
STMicroelectronics STB80NE03L-06T4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, ...
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DescriptionSTMicroelectronics STB80NE03L-06T4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):80 A, Drain Current-Max (ID):80 A, Drain-source On Resistance-Max:8 mΩ
DescriptionMOSFET N-CH 30V 80A D2PAK
DescriptionSTMicroelectronics STB80NE03L-06T4 Discrete Semiconductor Products
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