STMICROECTRONICS STB75NH02LT4 overview
STMicroelectronics STB75NH02LT4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Num...
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DescriptionSTMicroelectronics STB75NH02LT4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:24 V, Number of Elements:1, Drain Current-Max (Abs) (ID):75 A, Drain Current-Max (ID):60 A, Drain-source On Resistance-Max:14 mΩ
DescriptionMOSFET N-CH 24V 60A D2PAK
DescriptionSTMicroelectronics STB75NH02LT4 Discrete Semiconductor Products
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