STMICROECTRONICS STB21NM60N overview
STMicroelectronics STB21NM60N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Numbe...
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Product groupModules
DescriptionSTMicroelectronics STB21NM60N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):17 A, Drain Current-Max (ID):17 A, Drain-source On Resistance-Max:220 mΩ
DescriptionTrans MOSFET N-CH 600V 17A 3-Pin(2+Tab) D2PAK T/R
DescriptionSTMicroelectronics STB21NM60N Discrete Semiconductor Products
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