STMICROECTRONICS STB20NM50-1 overview
STMicroelectronics STB20NM50-1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number o...
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DescriptionSTMicroelectronics STB20NM50-1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (Abs) (ID):20 A,Drain Current-Max (ID):20 A,Drain-source On Resistance-Max:250 m?
DescriptionMOSFET N-CH 550V 20A I2PAK
DescriptionSTMicroelectronics STB20NM50-1 Discrete Semiconductor Products
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