STMICROECTRONICS STB200NF04-1 overview
STMicroelectronics STB200NF04-1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Numb...
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DescriptionSTMicroelectronics STB200NF04-1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:40 V, Number of Elements:1, Drain Current-Max (Abs) (ID):120 A, Drain Current-Max (ID):120 A, Drain-source On Resistance-Max:3.7 mΩ
DescriptionMOSFET N-CH 40V 120A I2PAK
DescriptionSTMicroelectronics STB200NF04-1 Discrete Semiconductor Products
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