STMICROECTRONICS STB16NK65Z-S overview
STMicroelectronics STB16NK65Z-S Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Numb...
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Product groupModules
DescriptionSTMicroelectronics STB16NK65Z-S Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:650 V, Number of Elements:1, Drain Current-Max (Abs) (ID):13 A, Drain Current-Max (ID):13 A, Drain-source On Resistance-Max:500 mΩ
DescriptionMOSFET N-CH 650V 13A I2SPAK
DescriptionSTMicroelectronics STB16NK65Z-S Discrete Semiconductor Products
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