STMICROECTRONICS STB12NM50T4 overview
STMicroelectronics STB12NM50T4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number ...
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DescriptionSTMicroelectronics STB12NM50T4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (Abs) (ID):12 A,Drain Current-Max (ID):12 A,Drain-source On Resistance-Max:350 m?
DescriptionSTMicroelectronics STB12NM50T4 Discrete Semiconductor Products
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