STMICROECTRONICS STB11NM60FDT4 overview
STMicroelectronics STB11NM60FDT4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Nu...
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DescriptionSTMicroelectronics STB11NM60FDT4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):11 A, Drain Current-Max (ID):11 A, Drain-source On Resistance-Max:450 mΩ
DescriptionSTMicroelectronics STB11NM60FDT4 Discrete Semiconductor Products
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