STMICROECTRONICS STB11NM60-1 overview
STMicroelectronics STB11NM60-1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Numbe...
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DescriptionSTMicroelectronics STB11NM60-1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):11 A, Drain Current-Max (ID):11 A, Drain-source On Resistance-Max:450 mΩ
DescriptionMOSFET N-CH 650V 11A I2PAK
DescriptionSTMicroelectronics STB11NM60-1 Discrete Semiconductor Products
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