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Manufactured byS&T
Product groupModules
DescriptionSTMicroelectronics STP6NB90 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:900 V,Number of Elements:1,Drain Current-Max (Abs) (ID):5.8 A,Drain Current-Max (ID):5.8 A,Drain-source On Resistance-Max:2 ?
DescriptionMOSFET N-CH 900V 5.8A TO-220
DescriptionSTMicroelectronics STP6NB90 Discrete Semiconductor Products
DescriptionST STP6NB90 MOSFET N-CH 135W 900V 5.8A TO-220
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