Product details
Manufactured byS&T
Product groupModules
DescriptionSTMicroelectronics STP35NF10 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):35 A, Drain Current-Max (ID):40 A, Drain-source On Resistance-Max:35 mΩ
DescriptionSTMicroelectronics STP35NF10 Discrete Semiconductor Products
DescriptionST STP35NF10 N-ch Low Gate Charge Power MOSFET -40A 100V TO-220
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Available from
Sourcing support available
Start a sourcing request