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Manufactured byS&T
Product groupModules
DescriptionSTMicroelectronics STP20NM60FP Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (Abs) (ID):20 A,Drain Current-Max (ID):20 A,Drain-source On Resistance-Max:290 m?
DescriptionTrans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FP Tube
DescriptionSTMicroelectronics STP20NM60FP Discrete Semiconductor Products
DescriptionST STP20NM60FP MOSFET N-CH 600V 20A 290mOhm TO220FP
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