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Manufactured byS&T
Product groupModules
DescriptionSTMicroelectronics STB60NH02LT4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:24 V, Number of Elements:1, Drain Current-Max (Abs) (ID):60 A, Drain Current-Max (ID):60 A, Drain-source On Resistance-Max:10.5 mΩ
DescriptionMOSFET N-CH 24V 60A D2PAK
DescriptionSTMicroelectronics STB60NH02LT4 Discrete Semiconductor Products
DescriptionST STB60NH02LT4 POWER MOSFET N-CHANNEL 60A 24V 0.0085Ω D2PAK
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