Woodhead SST SST29VE020 overview
SST SST29VE020 2 Megabit (256K x8) Page-Mode EEPROM, 2.7-3.6V.The SST29EE020/29LE020/29VE020 are 256K x8 CMOS Page-Write EEPROM manufactured with SST’s propri...
Product details
Manufactured byWoodhead SST
Product groupEEPROM
DescriptionSST SST29VE020 2 Megabit (256K x8) Page-Mode EEPROM, 2.7-3.6V.The SST29EE020/29LE020/29VE020 are 256K x8 CMOS Page-Write EEPROM manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE020/29LE020/29VE020 write with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE020/29LE020/29VE020 conform to JEDEC standard pinouts for byte-wide memories.Featuring high performance Page-Write, the SST29EE020/29LE020/29VE020 provide a typical ByteWrite time of 39 µsec. The entire memory, i.e., 256 KBytes, can be written page-by-page in as little as 10 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of a Write cycle. To protect against inadvertent write, the SST29EE020/29LE020/29VE020 have on-chip hardware and software data protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST29EE020/29LE020/29VE020 are offered with a guaranteed Page-Write endurance of 104 cycles. Data retention is rated at greater than 100 years.
Key FeaturesSingle Voltage Read and Write Operations– 5.0V-only for the SST29EE020– 3.0-3.6V for the SST29LE020– 2.7-3.6V for the SST29VE020 Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention Low Power Consumption– Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V– Standby Current: 10 µA (typical) Fast Page Write Operation– 128 Bytes per Page, 2048 Pages– Page Write Cycle: 5 ms (typical)– Complete Memory Rewrite: 10 sec (typical)– Effective Byte Write Cycle Time: 39 µs (typical) Fast Read Access Time: 120 and 150 ns– 5.0V-only operation: 120 and 150 ns– 3.0-3.6V operation: 200 and 250 ns– 2.7-3.6V operation: 200 and 250 ns Latched Address and Data Automatic Write Timing– Internal VPP Generation End of Write Detection– Toggle Bit– Data# Polling Hardware and Software Data Protection TTL I/O Compatibility JEDEC Standard– Flash EEPROM Pinouts and command sets Packages Available– 32 Pin PDIP– 32-Pin PLCC– 32-Pin TSOP (8mm x 14mm, 8mm x 20mm)
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Woodhead SST
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EEPROM
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