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HY5PS561621BLF-E4

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Hynix HY5PS561621BLF-E4

Hynix HY5PS561621BLF-E4 overview

SK Hynix Inc HY5PS561621BLF-E4 Dram, Memory Density:268.4355 Mbit, Memory Width:16, Organization:16MX16, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, ...

Manufactured byHynix
Part number or familyHY5PS561621BLF-E4
Product groupDRAM's

Product details

Manufactured byHynix
Product groupDRAM's
DescriptionSK Hynix Inc HY5PS561621BLF-E4 Dram, Memory Density:268.4355 Mbit, Memory Width:16, Organization:16MX16, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:600 ps, Clock Frequency-Max (fCLK):200 MHz, Refresh Cycles:8192

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