Product details
Manufactured byHynix
Product groupDRAM's
DescriptionSK Hynix Inc H55S1222EFP-75E Dram, Memory Density:134.2177 Mbit, Memory Width:32, Organization:4MX32, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:6 ns, Clock Frequency-Max (fCLK):133 MHz, Refresh Cycles:4096, Access Mode:FOUR BANK PAGE BURST
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